This DOE Energy Storage Systems project, managed by Sandia in partnership with GeneSiC Semiconductor Inc., and the U.S. Army Armament Research, Development and Engineering Center (ARDEC), has developed an ultra-high-voltage silicon carbide thyristor. The semiconductor device allows next-generation "smart grid" power electronics system to be built up to 10 times smaller and lighter than current silicon-based technologies. These packaged-power devices are the world's first commercially available, high-voltage, high-frequency, high-current, high-temperature, single-chip SiC-based thyristors. Their performance advantages are expected to spur innovations in utility-scale power electronics hardware and to increase the accessibility and use of distributed energy resources.
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SAND 2011-2396P