In this video, we tried to explain in detail the structure, working logic and places of use of shottky diodes (schottky diode), which we may encounter with communication circuits, power circuits and many other places. Normal diodes cannot respond to the change in direction of the voltage applied to it at very high frequencies. In other words, they cannot switch from conductive state to insulator state or from insulator state to conductor state. Shootki diodes are produced for use in computers, RF and rectifier applications that need high switching speed to respond to these rapid changes.
As with the Silicon diode, which consists of a normal doped PN structure, the Shootki diode has an anode and a cathode end. This diode also has a white stripe on the cathode end. If the current is going from the Anode to the Cathode, the diode allows the current to pass and prevents it from going in the opposite direction.
These diodes have a lower forward voltage drop compared to ordinary regular silicon PN junction diodes. Normal Silicon diodes consist of the combination of P-type and N-type doped semiconductors. The junction point, which is the neutral region of the P and N structure, is wide. Shootki diode consists of combining N-type doped semiconductor with a metal-coated P-type doped semiconductor. In addition, the junction point in the middle, that is the neutral zone, has been thinned and it is made easier for the current to exceed the neutral zone.