MOS Parasitics and SPICE Model
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Күн бұрынIn this video we have covered the basic of MOS capacitance and resistances which helps us to model the device for circuit applications. A brief discussion on SPICE model is also presented in this video.
@giridhar1424 3 жыл бұрын
So, here the charge flow in sub threshold region are also being neglected here in the capacitance model of MOSFET!
@09baher 2 жыл бұрын
@ 35:04, I believe Kn prime should be Un Cox without the 1/2. Thanks.
@sandeep386 Жыл бұрын
1st one is crct right ? tht satn eqn is wrong i think
@chidanandadatta4695 2 жыл бұрын
24:40 , sir as v increase should c has to decrease? . as c=e.a/d , deplition inc as v inc , c ?
@mdkalimullah4207 5 жыл бұрын
Why the other videos are private
@agentwalker7045 8 ай бұрын
11:40 in this case shouldn't both lateral lengths be different as for s and D biasing conditions are different. S is generally grounded D is at some potential. So how both diffusion lengths are same ?? Somebody help
@subhradeepbhattacharjee5405 6 ай бұрын
I think its lengths are not dependent on the biasing, it depends on the doping concentration.
@anandhavaldar1937 4 жыл бұрын
What is second order effect ?
@lexiweasly7245 3 жыл бұрын
DIBL CLM Velocity Saturation Sub-Threshold Current
@RAVIKUMAR-vi6tc 3 жыл бұрын
poorly explained capacitance in different regions of operation
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