MOS Transistor Basics-II

Рет қаралды 116,042

IIT Roorkee July 2018

5 жыл бұрын

In this video we have covered the basic equations governing the physics of MOS transistor. The transfer characteristics, sub-threshold slope and region of operations are discussed briefly.

Пікірлер: 25

@swetakashyap 3 жыл бұрын

Very nice way of delivering things...

@aishwaryabuyya3793 2 жыл бұрын

awesome lecture :)

@jainandanmodi1124 3 жыл бұрын

q is charge per unit length. @3.17

@vijaypratap626 3 жыл бұрын

Sir I think Q is charge per unit length

@rutvikpatel4891 11 ай бұрын

🎯 Key Takeaways for quick navigation: 00:24 🧠 Lecture focuses on MOS transistor current-voltage characteristics. 01:18 🚀 Drift current explained due to electric field influence on charge carriers. 03:37 💡 Threshold voltage determines channel formation in MOSFETs. 04:57 ⚡ Overdrive (VGS - VTH) defines available gate voltage for charge carriers. 06:13 📏 Charge density per unit area relates to available gate voltage. 08:08 🏞 Gradual channel approximation and charge sheet model assumptions. 09:56 🔌 Electric field influences charge distribution along the channel. 12:12 🔌 Mobility (μ) relates velocity to electric field for charge carriers. 14:35 🔗 Drain current (ID) equation derived with mobility and electric field. 17:02 🔥 Saturation region explained where ID becomes independent of VDS. 18:52 🔄 Drain current (ID) parabolic graph indicates saturation and linear regions. 20:26 📉 On-resistance (Ron) inversely proportional to overdrive (VGS - VTH). 22:00 ⚡ Sub-threshold region explained, with ID continuity below threshold. 23:18 🌐 Strong inversion onset at surface potential > 2 * Fermi potential + applied voltage. 23:45 🔌 Sub-threshold operation results in low current, but to turn off the device completely, the voltage must go well below the threshold. 24:10 ⚙️ Sub-threshold slope is the gate voltage change needed for a decade drop in current, typically measured in millivolts per decade. 25:24 📊 IDS equation during sub-threshold operation can be approximated, yielding insights into current variations. 26:33 📈 Linear region, saturation region, and deep triode region are operational modes in a MOSFET with distinct characteristics. 27:54 🔌 In saturation, gate-source voltage must be greater than threshold for current flow. Gate voltage determines ON resistance variation. 28:23 📚 Recap of MOSFET basics, types, voltage control, and current behavior in different regions. 29:15 🔄 In saturation, a MOSFET acts as a constant current source with infinite output impedance. Made with HARPA AI

@KaushalRIXC 2 жыл бұрын

Where can I get pdf for this presentation??

@atulgupta7668 5 жыл бұрын

sir please provide me pdf of this course.

@bukubukuchakama6005 4 жыл бұрын

12:30 Sir electron moves in the direction of increasing potential and here you are saying elections move from high potential to low potential due to a negative sign to it. It will be really helpful if you please clear our doubt here ?

@killerjohny6116 3 жыл бұрын

As we have given +ve voltage to drain so that electrons move from source to drain.. so current is flowing in opposite direction (drain to source) that is why we have took minus there..

@srikantaskashyap6977 Жыл бұрын

He mistakenly said electron actually it is current which moves in opposite direction

@naina2557 3 жыл бұрын

It acts as a resistor in linear or none linear region?

@pippallachakravarthi3728 3 жыл бұрын

linear region

@pavan_pelleti Жыл бұрын

As q=cV why we have taken q=w.Cox.(Vgs-Vth) any one can tell me ? why W=width came extra?

@SumitKumarCode Жыл бұрын

w = width that is in meters and Cox is capacitance per unit area which means Cox = C/m^2 so Q = w. Cox.(Vgs - Vth) Q = m.(C/m^2).V here meter will cancel out m^2 and we will left with (C/m).V so C.V = Q and here sir told us that q mentioned above was charge per unit length