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Inverter Delays (English) | VLSI
The delay of an NMOS (n-type metal-oxide-semiconductor) inverter is the time it takes for the output to transition from one logic level to the other in response to a change in the input. The delay of an NMOS inverter is determined by several factors, including the technology used to fabricate the inverter, the load capacitance at the output, the size of the transistors, and the supply voltage.
The delay of an NMOS inverter can be divided into two components: the rise time and the fall time. The rise time is the time it takes for the output to transition from low to high, and the fall time is the time it takes for the output to transition from high to low.
The rise time and fall time of an NMOS inverter can be affected by several factors, including:
Channel Length Modulation: As the input voltage increases, the channel length of the NMOS transistor decreases, which reduces the drain-source resistance and increases the output current. This effect results in a faster rise time but a slower fall time.
Load Capacitance: The load capacitance at the output of the inverter affects the rise time and fall time. A larger load capacitance results in a slower rise time and fall time.
Supply Voltage: The supply voltage affects the speed of the inverter. A higher supply voltage results in a faster rise time and fall time.
Transistor Size: The size of the NMOS transistor affects the rise time and fall time. A larger transistor results in a faster rise time and fall time.
In general, the delay of an NMOS inverter can be reduced by optimizing the technology, increasing the supply voltage, reducing the load capacitance, and increasing the size of the transistors. However, these optimizations may result in higher power consumption and higher circuit area, so a trade-off must be made between delay and power consumption.
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