Power dissipation of a gate driver and TI’s blunder

Рет қаралды 6,303

Sam Ben-Yaakov

Күн бұрын

Пікірлер: 27

@47viewer 15 күн бұрын

Excellent source of information in this video, by the way. Thank You.

@sambenyaakov 15 күн бұрын

Thanks

@riscy00 Жыл бұрын

I was constantly surprised by mistakes in the TI datasheet/app note, nice video.

@sambenyaakov Жыл бұрын

Indeed. Surprising.

@CATA20034 Жыл бұрын

They have many mistakes. It's better to take their datasheet and try to do your own calculations based on the internal blocks of device and than only compare the resuslts. Related to their application note/design examples, they are killing the designer work if you just take the formula...

@sambenyaakov Жыл бұрын

@@CATA20034 The worse part is that many a times they are giving equations without any explanation

@thuyavansathiamurthi3592 Жыл бұрын

I've spent the last week learning about the switching losses from TI's datasheets and I was wonder why it never matched up with my simulations. Thank you for clearing this up!!!!

@sambenyaakov Жыл бұрын

👍Thanks for sharing.

@ricksampson6780 Жыл бұрын

Perhaps the pre-requisite educational standards at TI have been diluted over time.

@sambenyaakov Жыл бұрын

Indeed

@hamidk4772 Жыл бұрын

Excellent presentation as always.

@sambenyaakov Жыл бұрын

Thanks Hamid

@robertthurman8412 Жыл бұрын

My goodness what a beautiful and thorough presentation. This was awesome. Professor, do you have any online classes that one could take. Your presentations are so well thought out.

@sambenyaakov Жыл бұрын

Thanks

@ameerbaidusi1223 Жыл бұрын

Thank you

@sambenyaakov Жыл бұрын

Thanks.

@nurahmedomar Жыл бұрын

I believe what you explained is correct except at @19:50, I think there is a misconception of power losses for which component. The datasheet indicates that are power losses for their gate driver IC component (quiescent power loss + switching losses), and at @19:58, those gate resistors are exceptions to the gate driver IC component. If we include those power losses from the gate resistors to the gate driver power losses, that is not fair. Different customers may use different resistance values for that gate resistors.

@sambenyaakov Жыл бұрын

72mW are the quiescent loss, 336mW is the the TOTAL charging loss which is divided between the driver and other resistors in the chain. So including ALL the 336mW as contributing to the temp rise is incorrect. Am I missing something?

@juanchirino7135 Жыл бұрын

Exellent Video!, i'm currently working on a brushless motor driver, and we have some issues on the thermal design and power dissipation. this is really hepfull to understand a bit more about the gate driver operation. by the way the precense of ringing on the high side mosfet dough to parasitic pcb inductance may affect the total power dicipated for the IC?

@riscy00 Жыл бұрын

I believe ringing does add power losses, and not only that, it increases the issue with EMI compliance; that why snubber is used, which can lead to higher power losses depending on switching freq for silicon-based MOSFET and size of gate charge, etc.

@sambenyaakov Жыл бұрын

Not really. Thanks for sharing

@alphonsjpulickan3433 6 ай бұрын

Hi Professor one doubt. To find the gate driver power loss, can we do it in this way. Find the average input power like you mentioned and average out power in out pin. Will the gate driver loss be input power- output power? Am I missing something here?

@sambenyaakov 6 ай бұрын

How would you find the output power?

@47viewer 15 күн бұрын

Why is PRd set to 0 at 8:37?

@sambenyaakov 15 күн бұрын

It is part of the driver that has been taken into account